| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device together with its manufacturing method wherein a bit line between two layers of BPSG films is prevented from being oxidized. SOLUTION: A first BPSG film 109 formed on a silicon substrate, a bit line 111 formed on the first BPSG film 109 and a second BPSG film 115 so formed as to cover the bit line 111 and the first BPSG film 109, are provided to a DRAM. Here, silicon nitride films 110 and 114 are further so provided as to cover the bit line 111 between the first BPSG film 109 and the second BPSG film 115. |
