| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a pattern forming method by which a change in the performance of a resist is prevented to prevent a variation in pattern dimensions and a pattern is effectively formed with a high sensitivity resist. SOLUTION: When a resist film is formed on a substrate to be worked and patterning is carried out, (1) a water-soluble polymer film is formed on the resist film in such a thickness as to satisfy antireflection conditions and patterning is carried out, and (2) the substrate is kept in an atmosphere under <=40% relative humidity after the formation of the resist film and before exposure.</p> |
