摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electro-optical device using thin-film transistors(TFTs) of a complementary type having high driving capability as active elements. SOLUTION: The electro-optical device has a substrate having an insulating surface, the TFTs formed on the insulating film surface, interlayer insulating films which are formed on the TFTs and contains inorganic matter, conductive films connected to the TFTs through first contacts formed on these interlayer insulating films, organic resin films formed on the TFTs, the interlayer insulating films and the conductive films and plural pixel electrodes connected to the second contacts formed on the organic resin films. The interlayer insulating films are formed between the organic resin films and the TFTs in order to prevent the direct contact of the organic resin films and the TFTs.</p> |