发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To miniaturize a chip of a power amplifier for a dual band portable terminal. SOLUTION: On a single chip, first and second power amplifiers are formed, and they comprise a multi-emitter bipolar transistor, respectively. A first unit transistor of the first power amplifier and a second unit transistor of the second power amplifier are substantially alternately placed in a plane.
申请公布号 JP2001102460(A) 申请公布日期 2001.04.13
申请号 JP19990279929 申请日期 1999.09.30
申请人 TOSHIBA CORP 发明人 KURIYAMA YASUHIKO
分类号 H01L27/082;H01L21/8222;H03F1/00;H03F1/30;H03F3/21;H03F3/68;(IPC1-7):H01L21/822 主分类号 H01L27/082
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