| 摘要 |
PROBLEM TO BE SOLVED: To obtain a positive type photoresist composition having high sensitivity and high resolving power of <=0.2 μm in the production of a semiconductor device, giving a photoresist of a rectangular shape and less liable to cause a dimensional shift in pattern transfer to a lower layer in an oxygen plasma etching step when the composition is used as the upper layer resist of a two- layer resist system. SOLUTION: The positive type photoresist composition contains an alkali- soluble polysiloxane containing at least a structural unit of formula I [where L is -A-OCO-, -A-COO-, -A-NHCO, -A-NHCOO-, -A-NHCONH-, -A-CONH-, -A-OCONH- or -A-S-, A is a single bond or arylene, CX is a divalent combining group and (n) is an integer of 1-6] as a copolymerization component. |
