| 摘要 |
PROBLEM TO BE SOLVED: To solve a technical problem in enhancing performance peculiar to microphotofabrication using far ultraviolet light, particularly KrF or ArF excimer laser light and to obtain a positive type photoresist composition less liable to cause development defects and excellent in edge roughness. SOLUTION: The positive type photoresist composition contains a compound which generated an acid when irradiated with active light or radiation and a resin containing repeating units each containing a group represented by a specified structure and increasing its rate of dissolution in an alkali developing solution under the action of the acid. |
