| 摘要 |
PROBLEM TO BE SOLVED: To obtain an AlGaInP based light emitting diode producing a high output and a fabrication method thereof. SOLUTION: In a standard AlGaInP based light emitting diode having a p-type upper electrode, a high carrier concentration is set only at the upper surface 6a and the side face 6b of a p-type current diffusion layer 6 as compared with the inner part 6c thereof. Since a low carrier concentration is set at the inner part 6c of the p-type current diffusion layer 6, effective current diffusion can be realized and since diffusion of a p-type dopant, e.g. Zn, from the p-type current diffusion layer 6 to an active layer 4 is suppressed, a high output can be achieved. |
