发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To reduce and even the parasitic inductance of wiring without limit on the number and arrangement of power semiconductor elements, in a power semiconductor module where a plurality of power semiconductor elements are connected to provide a module. SOLUTION: Patterns on a substrate where two electrodes, first and second electrodes of a power semiconductor element, or first and second electrode patterns, are provided. A first electrode wiring conductor wired between the first electrode pattern and an external connection terminal and a second electrode wiring connector wired between the second electrode pattern and an external connection terminal are provided. The second electrode wiring conductor and the second electrode pattern are made to have a mutual inductance, or the first electrode wiring conductor and the first electrode pattern provide it.
申请公布号 JP2001102519(A) 申请公布日期 2001.04.13
申请号 JP19990278487 申请日期 1999.09.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 OI TAKESHI;MATSUMOTO HIDEO
分类号 H01L25/07;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L25/07
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