| 摘要 |
PROBLEM TO BE SOLVED: To suppress increase in the formation area of an aligning mark use for an exposing method using a scanning transfer light aligner and an electron beam aligner. SOLUTION: Two 1st line patterns 101 are formed side by side in parallel along their length. Six 2nd line patterns 102, which are perpendicular to the length of the 1st line patterns 101, are formed on both sides of the 1st line patterns 101 across the width of the 1st line patterns 101. Three 3rd line patterns 103, which are parallel along the length of the 1st line patterns 101, are formed on both sides of the 2nd line patterns 102 across the width of the 1st line patterns 101. |
