| 摘要 |
PROBLEM TO BE SOLVED: To enable an upper conductive film of ITO and a lower conductive film of Cr to be electrically connected satisfactorily together through a contact hole, where and insulating film is interposed between the upper conductive film and the lower conductive film. SOLUTION: A contact hole, which is provided to an insulating film so as to enable a first electrode or a wiring which, is formed on a board and covered with the insulating film to be connected electrically to a second electrode or a wiring or pixel ITO electrode formed on the insulating film, is formed such that where the contact hole is bored in the insulating film by two dry etching processes, a first dry etching process which is carried out under a first etching condition where the pressure of a processing gas is set at a pressure lower than 202Pa and a second dry etching process which is carried out under a second etching condition where the pressure of a processing gas is set at a pressure higher than 20Pa.
|
