NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND FABRICATION THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element having a high emission efficiency and a low working voltage realized through good ohmic contact, and a fabrication method thereof. SOLUTION: In the p-type layer of a nitride semiconductor light emitting element, activation rate of p-type impurities is increased by decreasing hydrogen concentration during growth of a p-type clad layer 6 and crystallinity is recovered by increasing hydrogen concentration during growth of a p-type contact layer 7 thus balancing the electrical characteristics and crystallinity of the p-type layer totally.