| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device of high electrostatic-breakdown resistance. SOLUTION: A plurality of internal circuits 20 and 30 of different power- source lines 25, 27, 35, and 37, inter-circuit signal wiring 14 provided across them, and a guard rings 22, 23, 32, and 33, which are provided to each of the internal circuits, connected to the power-source lines, constitute a semiconductor integrated circuit device 50. Here, with the guard rings formed in duplex, such guard rings 22 and 23 as correspond to the internal circuit 20 with a smaller area among adjoining internal circuits are all circulated, while being related to the guard rings 32 and 33 which correspond to the internal circuit 30 of larger area, any portion of the internal circuit 30 omitted at the adjoining place. Thus, the abnormal voltage is divided/shared between the internal circuits, the difference in electric potentials and breakdown strength caused at both ends of the inter-circuit signal wiring are relaxed.</p> |
