| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a flat-plate wafer that can markedly shallow the crack depth of a machining deterioration layer generated in the flat-plate wafer obtained by cutting a semiconductor crystal ingot by a wire saw-cutting device, can quickly and easily allow the crack to disappear for mirror polishing, even when lap polishing is omitted for directly carrying out double-sided mirror machining, and can greatly increase the productivity and yield of the thin-plate wafer. SOLUTION: In this manufacturing method of a thin-plate wafer, polishing liquid with an abrasive grain with a fine diameter is sprayed, and at the same time a semiconductor crystal ingot is cut by a wire saw-cutting device, thus cutting a plurality of thin-plate wafers, allowing the cut thin-plate wafers to be subjected to double-sided mirror polishing, and allowing the thin-plate wafer which is subjected to the double-sided mirror polishing to be subjected to finish polishing by a finish-polishing device. |
