| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor capacity type pressure sensor stably and inexpensively manufacturable, having high reliability and measurement accuracy. SOLUTION: In this semiconductor capacity type pressure sensor having a semiconductor substrate, a silicone diaphragm held on the semiconductor substrate displaceable according to the change of a surrounding pressure, an aperture formed between the semiconductor substrate and the diaphragm, and a silicon oxide film for sealing airtightly the periphery of the aperture, the diaphragm is insulated from the semiconductor substrate through a dielectric, and a fixed electrode opposing to the diaphragm is formed on the dielectric through the aperture, and the size of the aperture is 0.2 to 1.3μm, the diameter of the diaphragm is 110 to 400μm, and the thickness of the diaphragm is 1.9 to 11.6μm.
|
