METHOD FOR FORMING OHMIC LAYER BY PLASMA CHEMICAL VAPOR DEPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a method for forming an ohmic layer by plasma chemical vapor deposition(PCVD) which can improve resistivity characteristics and the problem that the surface of a semiconductor substrate is damaged, when titanium silicide is formed as an ohmic layer. SOLUTION: This method for forming an ohmic layer comprises a first step of forming injecting hydrogen or argon gas with a semiconductor substrate stored in the plasma chamber of a chemical vapor deposition system, a second step of injecting a Ti-containing source gas into the a plasma chamber, and a third step of forming a RF plasma in the plasma chamber to deposit a titanium film.