| 摘要 |
PROBLEM TO BE SOLVED: To diminish a difference in characteristic impedance of a line conductor of a high-frequency semiconductor element after sealing with a metallic lid from that before the sealing in a high-frequency semiconductor device. SOLUTION: The high-frequency semiconductor device is provided with a substrate 11 comprising a mounting 11a for a high-frequency semiconductor element 13 on its upper plane, the high-frequency semiconductor element 13 mounted on the substrate 11a and comprising a line conductor 14, a frame body 12 junctioned with the substrate 11 for surrounding the mount part 11a, a high-frequency input and output part 15 arranged so as to penetrate the frame body 12, and a lid 20 junctioned with the upper surface of the frame body 12. As for the lid 20, upper surface earth conductors 22 are formed on the upper surface of a dielectric plate 21, and lower surface earth conductors 23 are formed on the lower surface except a part 24 which faces to the line conductor 14 of the high-frequency semiconductor element 13. Also, through conductors 15 for passing the conductor 22 and 23 there through are arranged inside the device. A characteristic impedance of the line conductor after sealing can be restrained from changing and a difference in a high-frequency characteristic can be diminished.
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