| 摘要 |
PROBLEM TO BE SOLVED: To provide a compact semiconductor device which is high in reliability by which operating capability is not reduced due to power noise. SOLUTION: This first semiconductor device has a wire layer forming region of a semiconductor substrate has a first wire layer, a second wire layer, and a capacitor that are stacked in this order from the surface to the inside in the perpendicular direction, one of first and second wire layers serves as a ground wire and the other serves as a power source wire, and the first and second wire layers are respectively connected to the first and second electrodes of the capacitor.
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