| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable thin-film capacitor, having satisfactory capacitor characteristics and its manufacturing method by avoiding roughness and delamination at an interface between a lower electrode and buffer layer. SOLUTION: A barrier layer 2, a lower electrode layer 4, dielectric thin film 5, and an upper electrode layer 6 are formed on a semiconductor substrate. Between the barrier layer 2 and lower electrode layer 4, a buffer layer 3 including an oxide, which is mainly made of anatase, is interposed. |
