| 摘要 |
PROBLEM TO BE SOLVED: To offer a semiconductor device which enables an insulation film having a flat surface to be easily formed, without increasing the number of processes. SOLUTION: A capacitor 8, which is formed on a first insulation layer 5 covering MOS transistors 3 and 4, has a columnar insulation member 8a, a first capacitive electrode 8b formed on the side of the columnar insulation member 8a, a capacitive insulation film 8c formed on the first capacitive electrode 8b, and a second capacitive electrode 8d formed on a capacitive insulation film 8c. In a connection opening 6 made in the first insulation layer 5, a conductive member 7 which connects the first capacitive electrode 8b and the source/ drain 3a of the MOS transistor 3. In a peripheral circuit region B (other than a memory cell region A, in which several memory cells having the transistor 3 and capacitor 8 are included), a second insulation layer 9, which is formed at the same time as the columnar insulation member 8a of the capacitor 8 and is identical with the columnar insulation member 8a which are equal in height and material, is provided. |
