| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing system which can uniformalize flow of gas and the form of a plasma, provide a small processing system by the occupation area of the device, reduce the loss of high-frequency power put in a high-frequency plasma process, and generate and maintain the plasma efficiently. SOLUTION: A processing system has a processing chamber 403 provided on the upper part of a transfer chamber 402 via a gate 416 (the diagram 4), a stage 406, which is sealed from the outside and has a mounting part 412 for mounting a material 415 to be treated, means 410 for moving the mounting part 412 of the stage 406 in such a way that the part 412 comes in and out between the chambers 402 and 403 via the gate 416 while the chamber 402 is sealed from the outside and means 413 and 414 for sealing the chambers 401 and 403 when the part 412 is in the chamber 403. |
