| 摘要 |
PROBLEM TO BE SOLVED: To provide a power MOS transistor having a trench gate of which gate breakdown voltage is satisfactory. SOLUTION: In a power MOS transistor at a peripheral end, where a gate electrode wiring layer 18 is drawn to a gate bus line, a trench 16a forming the gate electrode wiring layer 18 is formed, so that it is brought into contact with a field insulating film 14 and a gate-insulating film 17 continues to the field insulating film 14.
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