| 摘要 |
PROBLEM TO BE SOLVED: To enable reaction products deposited on the inner wall of a vacuum chamber to be removed more easily than normally, in a semiconductor manufacturing apparatus where a semiconductor substrate is etched with discharge plasma, and a method of cleaning the same. SOLUTION: A semiconductor manufacturing apparatus processes a semiconductor substrate, in a manner where a high-frequency current is applied to a first electrode 3 arranged inside a vacuum processing chamber 1 and a coil 7 arranged outside the vacuum processing chamber 1, by which an inductive coupling-type plasma 10 is generated in the vacuum processing chamber 1, and a processed substrate is processed with plasma 10. A second electrode 9 provided in advance to a part of the outer surface of the vacuum processing chamber 1 is additionally arranged furthermore, and a high-frequency current is applied to the second electrode 9 to remove reaction products deposited inside the vacuum processing chamber. |
