| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas treatment device for operating uniform treatment to the surface of a substrate to be treated such as a wafer by using plasma. SOLUTION: A shower head 32 constituted, so that the opening area of a gas hole 33 per unit area can be made larger at the outer edge than the central part is arranged directly under a transparent window 23 so as to be faced to a wafer W. Also, a gas hole controlling member 34 for controlling the opening and closing of the gas hole 33 is arranged under the shower head 32. |
