| 摘要 |
PROBLEM TO BE SOLVED: To prevent the light emitted from a gallium nitride-based compound semiconductor light-emitting element, having an n-type electrode formed around a pad electrode for a p-type and a p-type light-transmissive electrode in the same plane from being interrupted by the n-type electrode, and accordingly, the external emission efficiency of the element from being lowered by forming the n-type electrode lower in level than the light-emitting layer of the element. SOLUTION: A nitride-based compound semiconductor light-emitting element has p- and n-type electrodes are flush with each other, and the n-type electrode is constituted of an n-type peripheral electrode and a pad electrode for an n-type. The surface of the n-type peripheral electrode is formed lower in level than the lower surface of a light-emitting layer. |
