| 摘要 |
PROBLEM TO BE SOLVED: To sandwich an electrode material, serving as a lower gate, at the time of wafer bonding using a wafer bonding technology. SOLUTION: A double gate field effect transistor comprises a lower gate electrode 3, a lower gate insulating film 4, a channel layer 5, a gate insulation film 7, and an upper gate electrode 8. An electrode material, serving as a lower gate 3, is sandwiched at the time of wafer bonding using a wafer bonding technology. Other process is similar to existing process for fabricating silicon integrated circuit in the fabrication of a semiconductor device, e.g. a double gate field effect transistor.
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