| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a rear-surface polysilicon semiconductor wafer of constant film-thickness, small and stable deflection level, and superior gettering performance. SOLUTION: A gettering layer of polysilicon is film-formed on an etched wafer surface, whose one surface is specularly polished, to remove a polysilicon layer on that surface, to manufacture a rear-surface polysilicon semiconductor wafer. Here, the wafer after the one surface is specularly polished is thermally processed at 700-1200 deg.C in a highpurity hydrogen atmosphere. The polysilicon gettering layer film-formed wafer is processed thermally in an inert gas atmosphere in the same process device in succession.
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