| 摘要 |
PROBLEM TO BE SOLVED: To eliminate an abnormal form at the connection hold formed at a low permittivity interlayer insulating film, related to a manufacturing method for a contact structure where the formation of embedded wiring and that of a low permittivity interlayer insulating film are coupled. SOLUTION: A fourth interlayer insulating film 11 is formed on the upper surface of the third interlayer insulating film 10. The fourth interlayer insulating film 11 is patterned for a wiring channel while the third interlayer insulating film 10 is patterned for a connection hole. The pattern of connection hole is firstly formed at a third low permittivity interlayer insulating film 9. Then a second interlayer insulating film 8 exposed there is removed and the wiring channel pattern is formed at the third interlayer insulating film 10. Second and third low permittivity interlayer insulating films 7 and 9 are etched to simultaneously form the wiring channel and connection hole. Thus, a photo-resist is re-formed without exposing the second and third low permittivity interlayer insulating films 7 and 9, an abnormal form being hard to take place at the connection hole. |
