| 摘要 |
PROBLEM TO BE SOLVED: To increase uniformity of processing, when a substrate, e.g. a wafer is subjected to development processing, etc. SOLUTION: While a wafer W is held at a wafer holding part 2 and temperature control liquid A is jetted from a flow passage 41 to the peripheral edge region on the reverse surface of the wafer, a developer D is applied to the wafer surface. Then while the temperature control liquid A is jetted from the flow passage 41 to the peripheral edge region on the wafer reverse surface, the wafer W is rotated for a specific time to carry out development. Consequently, the wafer holding part 2 which has large heat capacity in a region near by the center part of the wafer W heats the wafer W to form a liquid film of temperature control liquid A in the peripheral edge region of the wafer W, which is thereby heated. At this time, since the wafer W is rotated, the developer D is stirred to suppress the generation of the temperature distribution of the developer D in the surface of the wafer W, and then development unevenness due to a temperature difference is suppressed, and a uniform developing process can be performed. |
