| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having trench gates, where the increase in its channel density and the promotion of its conductivity modulation are made compatible with each other. SOLUTION: An IGBT has a p-type emitter layer 17, and a p-type base layer 12 between which an n-type base layer 11 is disposed. In the IGBT, each main trench 25 and each transverse trench 26 are so formed that they pass through the p-type base layer 12 to reach the n-type base layer 11. Columns 27 so comprises columns 27a having the formed transverse trenches 26 and columns 27b having no transverse trench 26 that the columns 27a, 27b are mixed with each other and are provided alternately as interposing each main trench 25 between the respective adjacent columns 27a, 27b. In the surface of each portion of the p-type base layer 12 which is surrounded by each main trench 25 and each transverse trench 26, each n-type emitter layer 15 is so formed, that each central exposed portion 12a of the p-type base layer 12 is left in each layer 15. Each emitter electrode 19 is so disposed as to be contacted with each n-type emitter layer 15 and each central exposed portion 12a of the p-type base layer 12.
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