发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To accurately control thickness in the manufacturing method of a semiconductor wafer. SOLUTION: This manufacturing method includes grinding processes S14 and S17 that grind at least one of front and back surfaces of a semiconductor wafer being sliced from the ingot of a semiconductor, and a polishing process S18, that polishes the ground surface of the semiconductor wafer after the grinding processes. In the grinding process, the semiconductor wafer is ground down to a predetermined thickness while in the polishing process, the ground surface is polished by a predetermined thickness.
申请公布号 JP2001102340(A) 申请公布日期 2001.04.13
申请号 JP19990273454 申请日期 1999.09.27
申请人 MITSUBISHI MATERIALS SILICON CORP 发明人 TANAKA KEIICHI;HASHIMOTO YASUYUKI
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
代理机构 代理人
主权项
地址