Composition for removal of a photoresist used as a mask in photolithography for integrated circuit manufacture comprises acetone, gamma-butyrolactone and an acetic acid ester

摘要

Photoresist removal composition consists of a mixture of (wt. %) 3-35 (preferably 8-15) acetone, 2-13 (preferably 4-7) gamma-butyrolactone and 55-95 (preferably 80-90) solvent comprising an ester, preferably an acetic acid ester. The composition can also include a surfactant. An Independent claim is given for a method of removal of a photoresist on a substrate. The method comprises: (a) spraying the above composition on the substrate rotating at a relatively slow rate (1200-1500 rpm) for 10-20 seconds; (b) interrupting substrate rotation for a short period (20-30 seconds); (c) spraying the composition on the substrate rotating at a relatively high rate (2000-2500 rpm) for 10-20 seconds; and (d) cleaning the substrate with pure water. Centrifugal drying of the substrate is preferably performed after stage (b) or (c).