SIMOX semiconductor structure e.g., wafer comprises a silicon substrate, a doped glass layer produced by ion implantation on the substrate and a silicon layer on the substrate

摘要

SIMOX semiconductor structure comprises a silicon substrate; a doped glass layer produced by ion implantation on the substrate; and a silicon layer on the substrate. An Independent claim is also included for a process for the production of a SIMOX semiconductor structure comprising preparing a silicon substrate; producing a silicon layer on the substrate; and reducing the dislocation density of the silicon layer by implanting ions in the substrate to form a glass layer between the substrate and the silicon layer.