发明名称 CRYSTALLINE GALLIUM NITRIDE AND METHOD FOR FORMING CRYSTALLINE GALLIUM NITRIDE
摘要 A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride (15); providing mineralizer (17); providing solvent (17); providing a capsule (10); disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule; disposing the capsule in a pressure cell (1); and subjecting the pressure cell to high pressure and high tempeature (HPHT) conditions for a length of time sufficient to dissolve the source gallium nitride and re-precipitate the source gallium nitride into at least one gallium nitride crystal. The invention also provides for gallium nitride crystals formed by the processes of the invention.
申请公布号 WO0124921(A1) 申请公布日期 2001.04.12
申请号 WO2000US26704 申请日期 2000.09.28
申请人 GENERAL ELECTRIC COMPANY 发明人 D'EVELYN, MARK, PHILIP;NARANG, KRISTI, JEAN
分类号 B01D9/02;B01J3/00;B01J3/06;C30B7/10;C30B29/38 主分类号 B01D9/02
代理机构 代理人
主权项
地址