发明名称 |
CRYSTALLINE GALLIUM NITRIDE AND METHOD FOR FORMING CRYSTALLINE GALLIUM NITRIDE |
摘要 |
A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride (15); providing mineralizer (17); providing solvent (17); providing a capsule (10); disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule; disposing the capsule in a pressure cell (1); and subjecting the pressure cell to high pressure and high tempeature (HPHT) conditions for a length of time sufficient to dissolve the source gallium nitride and re-precipitate the source gallium nitride into at least one gallium nitride crystal. The invention also provides for gallium nitride crystals formed by the processes of the invention. |
申请公布号 |
WO0124921(A1) |
申请公布日期 |
2001.04.12 |
申请号 |
WO2000US26704 |
申请日期 |
2000.09.28 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
D'EVELYN, MARK, PHILIP;NARANG, KRISTI, JEAN |
分类号 |
B01D9/02;B01J3/00;B01J3/06;C30B7/10;C30B29/38 |
主分类号 |
B01D9/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|