发明名称 SEMICONDUCTOR LASER EXCITATION SOLID STATE LASER
摘要 <p>PROBLEM TO BE SOLVED: To prevent a lateral mode from being made higher order and to avoid the problem of increase in cost and getting into difficulty with adjustment caused by increase of the number of components, in a semiconductor laser induced solid state laser. SOLUTION: In a semiconductor laser excitation solid state laser provided with a resonator that contains at least a solid state laser crystal 14 and a semiconductor laser 11 that excites the solid state laser crystal 14, at least one of optical members arranged in the resonator, for example, a light- transmitting surface 14a of the solid state laser crystal 14 has a size 1.5-7 times the diameter of a solid state laser beam 20 defined as 1/e2 diameter, in at least one direction which is orthogonal to the optical axis of the resonator.</p>
申请公布号 JP2001102667(A) 申请公布日期 2001.04.13
申请号 JP19990278631 申请日期 1999.09.30
申请人 FUJI PHOTO FILM CO LTD 发明人 ADACHI TAKASHI
分类号 H01S3/10;G02F1/37;H01S3/094;H01S3/109;(IPC1-7):H01S3/10 主分类号 H01S3/10
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