发明名称 EXPOSURE MASK ETCHING METHOD AND DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To enable a mask etching process to be carried out at a lower cost by a method, where a heat distribution and a membrane mask are each enhanced in controllability and dimensional controllability respectively in a membrane mask etching process. SOLUTION: The distance between a heat sink 6 arranged close to the rear of a membrane 2 and the membrane 2 is made to range, so as to relax the distribution of a pattern dimensional change on an etching plane in a process where a membrane is etched. The heat sink 6, made to approach the rear of the membrane 2, is divided into several parts, and each part of the heat sink 6 is set at an optimal temperature so as to relax distribution of a pattern dimensional change on an etching plane. At least one or more mounting holes for mounting the heat sink 6 are provided to an membrane mask etching cassette.</p>
申请公布号 JP2001102363(A) 申请公布日期 2001.04.13
申请号 JP19990280669 申请日期 1999.09.30
申请人 TOSHIBA CORP 发明人 SUGIHARA SHINJI
分类号 H01L21/302;C23F4/00;G03F1/22;H01L21/027;H01L21/3065;(IPC1-7):H01L21/306;G03F1/16 主分类号 H01L21/302
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