发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent corrosion of Al on a bad due to moisture, by forming an alumina film at a part, which is not covered with wires, on the surface of the bonding pad on a wire-bonded semiconductor integrated circuit chip by anodic oxidation. CONSTITUTION:The upper and lower sides of a semiconductor integrated device are inverted. The surface of a bonding pad 2 on an integrated circuit chip 1 is immersed in an oxalic acid solution 8. The anode side of a power source is connected to an island 5 and pins 6 of a lead frame. The cathode of the power source is connected to the electrode, i.e., a case 9 of the oxalic acid solution. A specified current is made to flow. An alumina film is formed on a part, which is not covered with wires 4 of the bonding pad 2 and contacted with the oxalic acid solution, by anodic oxidation. Since the alumina film has excellent moisture resistance, the alumina bonding pad is not corroded with moisture intruded from the outside, and reliability is improved.
申请公布号 JPS63179538(A) 申请公布日期 1988.07.23
申请号 JP19870012662 申请日期 1987.01.21
申请人 NEC CORP 发明人 YOKOSUKA SHIGERU
分类号 H01L21/60 主分类号 H01L21/60
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