| 摘要 |
PURPOSE:To enhance electrostatic breakdown strength at a terminal part, by inserting a Zener diode 26 and a diode 28, which constitute a monolithic structure, between the terminal part, which is provided on the surface of a substrate in a semiconductor device through an insulating layer, and the substrate. CONSTITUTION:In a semiconductor device, the following parts are formed. An N-P-N type transistor 4 as an active element is provided. A resistor element 6 is provided at the base of the transistor. A resistor element 8 is provided between the base and the emitter of the transistor. A base terminal 10, a collector terminal 12 and an emitter terminal 14 are provided. Thus a general-purpose unit is constituted. A Zener diode 26 and a diode 28 are formed between the base terminal 10 constituting a terminal part as a bonding pad and the collector of the transistor 4 constituted by a substrate 2. The Zener diode 26 and the diode 28 are formed in a monolithic structure in series. Thus static electricity in the terminal part can be discharged through the Zener diode and the diode to the substrate side, and electrostatic breakdown strength in the terminal part can be enhanced.
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