Semiconductor device e.g., metal oxide semiconductor field effect transistor includes silicon on insulator substrate with semiconductor layer, isolation films, gate electrode, intermediate layer isolation film and filled contact hole

摘要

Semiconductor device comprises: a silicon on insulator (SOI) substrate with a semiconductor layer; a first element isolation film and a gate isolation film on the semiconductor layer; a gate electrode formed on the gate isolation film and the element isolation film; an intermediate layer isolation film, and a contact hole filled with a conductor on the intermediate layer isolation film. Semiconductor device comprises: a silicon on insulator substrate (1) with a semiconductor substrate (2), an insulating layer (3) and a semiconductor layer (4); a first element isolation film (9) and a gate isolation film (5N) formed on the surface of the semiconductor layer; a gate electrode (6N) formed on the gate isolation film and the element isolation film; an intermediate layer isolation film (10) formed on the gate electrode and the first element isolation film; and a contact hole (11N) filled with a conductor (21) formed on the surface of the intermediate layer isolation film. The conductor is in contact with the gate electrode on the first element isolation film. An Independent claim is also included for a process for the production of the semiconductor device. Preferred Features: The gate electrode is formed so that its side wall lies on the first element isolation film. The conductor is in contact with the side wall of the gate electrode.