发明名称 METHOD FOR MAKING A RIDGE WAVEGUIDE SEMICONDUCTOR DEVICE
摘要 <p>An electro-optical device including a ridge waveguide with at least one overhanging sidewall has polyimide filling in the region under the overhanging sidewall to facilitate the deposition of a continuous metal ridge-contact layer. The polyimide is deposited surrounding the ridge waveguide and etched using directed reactive ion etching at low pressure and high temperature leaving polyimide filling in the region under the overhanging sidewall.</p>
申请公布号 WO2001026193(A1) 申请公布日期 2001.04.12
申请号 US2000027041 申请日期 2000.09.29
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