发明名称 Charge transfer device, solid state image pickup device using the same, and control method
摘要 <p>A charge transfer device having: a semiconductor substrate; a charge transfer path formed in the semiconductor substrate and made of a first conductivity type semiconductor layer; a plurality of charge transfer electrodes formed near above the charge transfer path; and a first pulse signal generator circuit for applying either a first pulse signal train for n-phase (n being an integer larger than 1) driving of charges in the charge transfer path to the charge transfer electrodes or a second pulse signal train for (n + 1)-phase driving of charges in the charge transfer path to the charge transfer electrodes. &lt;IMAGE&gt;</p>
申请公布号 EP1091567(A2) 申请公布日期 2001.04.11
申请号 EP20000121321 申请日期 2000.10.09
申请人 FUJI PHOTO FILM CO., LTD. 发明人 YAMADA, TETSUO
分类号 H01L27/148;H01L21/339;H01L29/762;H01L29/768;H04N5/335;H04N5/341;H04N5/349;H04N5/372;H04N5/376;H04N9/04;(IPC1-7):H04N3/15 主分类号 H01L27/148
代理机构 代理人
主权项
地址