| 摘要 |
Disclosed are an electron-beam lithography system employing an optical mark detector and having a distance of movement, by which a stage must be moved, minimized, and an alignment method. The electron-beam lithography system consists mainly of an electro-optical column, a control unit, a stage moving mechanism, a mark detector, and at least two optical mark detectors. The electro-optical column accommodates an electron beam source, a converging unit for converging en electron beam output from the electron beam source, and a deflecting unit for deflecting the electron beam. The control unit controls the converging unit and deflecting unit. The stage moving mechanism moves a stage that holds a sample to which an electron beam is irradiated. The mark detector measures electrons reflected when a position detection mark inscribed on the sample or stage is scanned with an electron beam, and detects the position of the position detection mark from a signal of detected reflected electrons. The at least two optical mark detectors optically detect the position of a position detection mark. <IMAGE> |
