发明名称 Semiconductor device
摘要 <p>A fixed electrode layer 12 is formed on a semiconductor substrate 11. A vibrating film is formed on the fixed electrode layer through a spacer 14. Since the vibrating film is a light-permeable film, in order to prevent the malfunction of an electronic circuit formed in the semiconductor substrate by incident light, the region where the electronic circuit is to be formed is covered with a shield metal 33. &lt;IMAGE&gt;</p>
申请公布号 EP1091617(A2) 申请公布日期 2001.04.11
申请号 EP20000308744 申请日期 2000.10.04
申请人 SANYO ELECTRIC CO., LTD.;HOSIDEN CORPORATION 发明人 OKAWA, SHIGEAKI;OHKODA, TOSHIYUKI;OHBAYASHI, YOSHIAKI;YASUDA, MAMORU;SAEKI, SHINICHI;OSAWA, SHUJI
分类号 H04R19/04;G01H11/06;H01L27/04;H01L29/84;H04R19/00;(IPC1-7):H04R19/00 主分类号 H04R19/04
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