发明名称 SEMICONDUCTOR ARRANGEMENT WITH OHMIC CONTACT AND A METHOD FOR CONTACTING A SEMICONDUCTOR ARRANGEMENT
摘要 A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second contact region serve for contact-connection. The first contact region and the second contact region have an at least approximately identical material composition which is practically homogeneous within the respective contact region. A method is provided for contact-connecting n-conducting and p-conducting silicon carbide, in each case with at least approximately identical material.
申请公布号 EP1090415(A1) 申请公布日期 2001.04.11
申请号 EP19990938136 申请日期 1999.06.07
申请人 SICED ELECTRONICS DEVELOPMENT GMBH & CO KG 发明人 FRIEDRICHS, PETER;PETERS, DETHARD;SCHOERNER, REINHOLD
分类号 H01L21/04;H01L29/45;(IPC1-7):H01L21/04 主分类号 H01L21/04
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