发明名称 Semiconductor device manufacturing system
摘要 There is provided a semiconductor device manufacturing system capable of carrying out resist stripping or surface pre-treatment of a substrate by use of a gas such as chlorosulfuric acid with high reactivity The manufacturing system comprises a process vessel 101 formed integrally of a process chamber 1 for treating respective surfaces of substrates 202 with a chemical vapor and a chemical storage chamber 2 for storing chemical for generating the chemical vapor, and a chemical heating means 5 for heating the chemicals stored in the chemical storage chamber 2 to evaporation.
申请公布号 US6212789(B1) 申请公布日期 2001.04.10
申请号 US19980132057 申请日期 1998.08.11
申请人 CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. 发明人 KATO TOSHIO;TOKUMASU NOBORU;AZUMI TAKAYOSHI
分类号 G03F7/30;H01L21/00;H01L21/027;H01L21/304;H01L21/306;(IPC1-7):F26B21/06 主分类号 G03F7/30
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