发明名称 |
Semiconductor device manufacturing system |
摘要 |
There is provided a semiconductor device manufacturing system capable of carrying out resist stripping or surface pre-treatment of a substrate by use of a gas such as chlorosulfuric acid with high reactivity The manufacturing system comprises a process vessel 101 formed integrally of a process chamber 1 for treating respective surfaces of substrates 202 with a chemical vapor and a chemical storage chamber 2 for storing chemical for generating the chemical vapor, and a chemical heating means 5 for heating the chemicals stored in the chemical storage chamber 2 to evaporation.
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申请公布号 |
US6212789(B1) |
申请公布日期 |
2001.04.10 |
申请号 |
US19980132057 |
申请日期 |
1998.08.11 |
申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
KATO TOSHIO;TOKUMASU NOBORU;AZUMI TAKAYOSHI |
分类号 |
G03F7/30;H01L21/00;H01L21/027;H01L21/304;H01L21/306;(IPC1-7):F26B21/06 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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