发明名称 |
Method of producing a semiconductor device |
摘要 |
A method of producing a semiconductor device including a step of forming separation grooves in scribing regions defined at boundary portions between a plurality of semiconductor-device forming portions formed on a top surface of a semiconductor substrate; a step of defining portions of the scribing regions in the semiconductor substrate as substrate connecting portions; and a step of cutting off the substrate connecting portions along the separation grooves, to thereby separate the plurality of semiconductor-device forming portions into chips. These production steps contribute to a higher working efficiency in a later assembling process and to improved mass-production.
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申请公布号 |
US6214639(B1) |
申请公布日期 |
2001.04.10 |
申请号 |
US19990365820 |
申请日期 |
1999.08.03 |
申请人 |
FUJITSU LIMITED |
发明人 |
EMORI MASAOMI;NUNOKAWA MITSUJI;HIRATSUKA KENICHI;ISHII MASANORI;KAWAKUBO HIROSHI |
分类号 |
H01L21/306;H01L21/301;H01L21/304;H01L21/68;H01L21/78;(IPC1-7):H01L21/48 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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