发明名称 Method of producing a semiconductor device
摘要 A method of producing a semiconductor device including a step of forming separation grooves in scribing regions defined at boundary portions between a plurality of semiconductor-device forming portions formed on a top surface of a semiconductor substrate; a step of defining portions of the scribing regions in the semiconductor substrate as substrate connecting portions; and a step of cutting off the substrate connecting portions along the separation grooves, to thereby separate the plurality of semiconductor-device forming portions into chips. These production steps contribute to a higher working efficiency in a later assembling process and to improved mass-production.
申请公布号 US6214639(B1) 申请公布日期 2001.04.10
申请号 US19990365820 申请日期 1999.08.03
申请人 FUJITSU LIMITED 发明人 EMORI MASAOMI;NUNOKAWA MITSUJI;HIRATSUKA KENICHI;ISHII MASANORI;KAWAKUBO HIROSHI
分类号 H01L21/306;H01L21/301;H01L21/304;H01L21/68;H01L21/78;(IPC1-7):H01L21/48 主分类号 H01L21/306
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