Conductive electrical contacts, capacitors, DRAMs, and integrated circuitry, and methods of forming conductive electrical contacts, capacitors, DRAMs, and integrated circuitry

摘要

The invention encompasses DRAM constructions, capacitor constructions, conductive contacts, integrated circuitry, methods of forming DRAM constructions, and methods of forming capacitor constructions. The invention includes a method of forming a contact to a node location comprising: a) forming an electrically insulative layer over a node location; b) patterning a masking layer over a portion of the insulative layer to form an unmasked portion and a masked portion of the insulative layer; c) removing parts of the masked and unmasked portions of the insulative layer to form a first opening over the node location which underlies a portion of the masking layer; d) forming an etch restriction layer within the first opening and over the masking layer; e) forming a sacrificial spacer layer within the first opening and over the etch restriction layer; f) forming a second opening extending from the first opening to the node location; and g) forming an electrically conductive pedestal within the first and second openings and in electrical connection with the node location. The invention also includes a capacitor comprising: a) an electrically conductive pedestal in electrical contact with a node location, the pedestal, viewed laterally in cross-section, comprising a pair of opposing lateral surfaces; b) an inner electrically conductive layer laterally against both lateral surfaces; c) a capacitor dielectric layer laterally against the inner conductive layer; and d) an outer electrically conductive layer laterally against the capacitor dielectric layer.