Method for manufacturing semiconductor device capable of improving etching rate ratio of insulator to refractory metal

摘要

In a method for manufacturing a semiconductor device, an insulating layer is formed on a refractory metal layer, and a contact hole in the insulating layer by a dry etching process using an etching gas. The etching gas includes one of:a mixture gas of fluorocarbon and hydrogen;a mixture gas of hydrofluorocarbon and hydrogen;a gas of hydrofluorocarbon; anda fluorocarbon gas except for CF4.