| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of particles while shortening a down time. SOLUTION: In a film forming process to form a film using CVD device having an inner tube in which a wafer is carried in and an outer tube surrounding the inner tube, when the accumulated film thickness of the inner tube reaches a preset value, a first parts exchanging step 41 to exchange only the inner tube is achieved, and then, a film forming step 30 is achieved after the parts are exchanged. When the accumulated film thickness reaches the preset value, a second parts exchanging step 42 is achieved to achieve the film forming step 30. After that, when the accumulated film thickness of the outer tube reaches the preset value, a full exchange step 50 to exchange the inner tube and the outer tube is achieved, and the film forming step 30 is achieved. Thus, the inner tube forming a maximum dust generating source can be cleaned, generation of particles can be prevented, and the stop time can be shorted by reducing the frequency of the full exchange.
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