发明名称 |
Process for forming polysilicon/germanium thin films without germanium outgassing |
摘要 |
An ultra-large scale integrated (ULSI) circuit includes MOSFETs which have different threshold voltages and yet have the same channel characteristics. The MOSFETs utilize gate structures with heavily doped polysilicon and germanium material. The polysilicon and germanium materials or thin films are manufactured by low pressure chemical vapor deposition. A silicon buffer layer and oxide cap is used to prevent germanium outgassing.
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申请公布号 |
US6214681(B1) |
申请公布日期 |
2001.04.10 |
申请号 |
US20000491843 |
申请日期 |
2000.01.26 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN |
分类号 |
H01L21/28;H01L21/336;H01L21/8234;H01L29/49;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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