| 摘要 |
A magnetoresistance element comprises a substrate, a first ferromagnetic layer formed on the substrate, a second ferromagnetic layer formed in lamination on the first ferromagnetic layer and having lower coercivity than the first ferromagnetic layer, a nonmagnetic layer formed between the first and second ferromagnetic layers, a first antiferromagnetic layer exchange-coupled to the first ferromagnetic layer, and a second antiferromagnetic layer exchange-coupled to the second ferromagnetic layer, wherein the direction of unidirectional anisotropy of the first antiferromagnetic layer is parallel to the magnetization direction of unidirectional anisotropy of the second antiferromagnetic layer is parallel to the magnetization direction of the second ferromagnetic layer. Utilizing this magnetoresistance element is a magnetic memory device, which stores information by changing the magnetizing direction of the first ferromagnetic layer in accordance with such information, and employs the second ferromagnetic layer as a detection layer for detecting the information so stored.
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